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Partname:NE334S01_00
Description: C BAND SUPER LOW NOISE HJ FET
Manufacturer:NEC Electronics Inc.
Datasheet:PDF (46.0K).
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The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems.

Click here to download NE334S01_00 Datasheet
Click here to download NE334S01_00 Datasheet
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