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| Partname: | NE33200M |
| Description: | Super low noise HJ FET. IDSS range 50-80 mA |
| Manufacturer: | NEC Electronics Inc. |
| Package: | Chip |
| Oper. temp.: | 0 to 175 |
| Datasheet: | PDF (85.1).
Click here to download *) |
The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial and industrial applications. |
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Click here to download NE33200M Datasheet*) |
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