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Partname:NE325S01
Description:C t0 KU band super low noise amplifier N-channei HJ FET.
Manufacturer:NEC Electronics Inc.
Package:Low cost plactic
Pins:4
Oper. temp.:0 to 125
Datasheet:PDF (50.5).
Click here to download *)

The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications.

Click here to download NE325S01 Datasheet
Click here to download NE325S01 Datasheet
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