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Partname: | NE32400N |
Description: | Ultra low noise pseudomorphic HJ FET. |
Manufacturer: | NEC Electronics Inc. |
Package: | Chip |
Oper. temp.: | 0 to 175 |
Datasheet: | PDF (52.6). Click here to download *) |
The NE32400 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. This device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate results in lower noise figure and high associated gain for consumer and industrial applications. |
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Click here to download NE32400N Datasheet*) |
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