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Partname:NE321000
Description:A GaAs HJ-FET chip for ultra low-noise high-gain amplification
Manufacturer:NEC Electronics Inc.
Package:Chip
Datasheet:PDF (48.7K).
Click here to download *)

The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.

Click here to download NE321000 Datasheet
Click here to download NE321000 Datasheet
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