|
|
|
|
| Partname: | NE27200 |
| Description: | C to KA band super low noise amplifier. N-channel HJ FET. |
| Manufacturer: | NEC Electronics Inc. |
| Package: | Chip |
| Oper. temp.: | 0 to 175 |
| Datasheet: | PDF (39.9).
Click here to download *) |
The NE27200 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for space applications. |
|
Click here to download NE27200 Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|
