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| Partname: | NE25339-T1 |
| Description: | General purpose dual-gate GaAs MESFET. IDSS range 10-80 mA. |
| Manufacturer: | NEC Electronics Inc. |
| Package: | SOT-143 |
| Pins: | 4 |
| Oper. temp.: | 0 to 125 |
| Datasheet: | PDF (48.5).
Click here to download *) |
The NE253 is an 800 m dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package. |
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Click here to download NE25339-T1 Datasheet*) |
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