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Partname:NE23300
Description:Super low noise HJ FET (space qualified).
Manufacturer:NEC Electronics Inc.
Package:Chip
Oper. temp.:0 to 175
Datasheet:PDF (53.8K).
Click here to download *)

The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain make it suitable for space applications.

Click here to download NE23300 Datasheet
Click here to download NE23300 Datasheet
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