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| Partname: | 2SJ648 |
| Description: | MOS FIELD EFFECT TRANSISTOR |
| Manufacturer: | NEC Electronics Inc. |
| Datasheet: | PDF (135K).
Click here to download *) |
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
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Click here to download 2SJ648 Datasheet*) |
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