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| Partname: | 2SC3583 |
| Description: | NPN transistor for microwave low noise amplifier |
| Manufacturer: | NEC Electronics Inc. |
| Package: | - |
| Pins: | 3 |
| Oper. temp.: | -65 to 150 |
| Datasheet: | PDF (92K).
Click here to download *) |
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique. |
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Click here to download 2SC3583 Datasheet*) |
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