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Partname:MJE18206
Description:NPN silicon power transistor
Manufacturer:Motorola
Package:TO-220AB
Pins:3
Oper. temp.:-65 to 150
Datasheet:PDF (504K).
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The MJE/MJF18206 have an application specific stateoftheart die dedicated to the electronic ballast ("light ballast") and power supply applications. Improved Global Efficiency Due to Low Base Drive Requirements: -- High and Flat DC Current Gain hFE -- Fast Switching

Click here to download MJE18206 Datasheet
Click here to download MJE18206 Datasheet
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