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Partname:MJE18004D2
Description:NPN silicon power transistor
Manufacturer:Motorola
Package:TO-220AB
Pins:3
Oper. temp.:-65 to 150
Datasheet:PDF (466K).
Click here to download *)

The MJE18004D2 is stateofart High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Click here to download MJE18004D2 Datasheet
Click here to download MJE18004D2 Datasheet
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