The MCM69F536C is a 1Mbit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the 68K Family, PowerPCTM, 486, i960TM, and PentiumTM microprocessors. It is organized as 32K words of 36 bits each. This device integrates input registers, a 2bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K). BiCMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability. Addresses (SA), data inputs (DQx), and all control signals except output enable (G) and Linear Burst Order (LBO) are clock (K) controlled through positiveedgetriggered noninverting registers. Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst addresses can be generated internally by the MCM69F536C (burst sequence operates in linear or interleaved mode dependent upon the state of LBO) and controlled by the burst address advance (ADV) input pin. Write cycles are internally selftimed and are initiated by the rising edge of the clock (K) input. This feature eliminates complex offchip write pulse generation and provides increased timing flexibility for incoming signals. Synchronous byte write (SBx), synchronous global write (SGW), and synchronous write enable SW are provided to allow writes to either individual bytes or to all bytes. The four bytes are designated as "a", "b", "c", and "d". SBa controls DQa, SBb controls DQb, and so on. Individual bytes are written if the selected byte writes SBx are asserted with SW. All bytes are written if either SGW is asserted or if all SBx and SW are asserted. For read cycles, a flowthrough SRAM allows output data to simply flow freely from the memory array.