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Partname: | RA20H8087M-01 |
Description: | V(dd): 17V; V(gg): 6V; 806-825 / 851-870 MHz 20W; 3-stage amplifier. For mobile radio |
Manufacturer: | Mitsubishi Electric Corp. |
Package: | - |
Pins: | 5 |
Oper. temp.: | -30 to 110 |
Datasheet: | PDF (77K). Click here to download *) |
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. |
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