The MA4SW424B-1 device is a SP4T Switch with Integrated Bias Network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and/or shunt diodes or vias by imbedding them in a low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices exceptional low loss and high isolation performance with exceptional repeatability through lower millimeter frequencies. Four mil square RF bond pads facilitate the use of low inductance ribbon bonds, while gold backside metalization allows for manual or automatic chip bonding using 80Au/20Sn, Sn62/Pb36/Ag2 solders or electrically conductive silver epoxy. Each RF Bond Pad has adjacent wire-bonded tuning pads available to optimize the RF Match for a particular frequency response.