The ultra low capacitance of the MA4AGBLP912 device allows use through W-band (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in microwave and millimeter wave switch designs, where lower insertion loss and higher isolation are required. The + 10 mA ( low loss state ) and the 0v ( isolation state ) bias of the diodes allows the use a simple + 5 V TTL gate driver. These AlGaAs diodes are used as switching arrays on radar systems, high-speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies.