The JDSU 2.5 Gb/s front-illuminated avalanche photodiode (FI-APD) is designed for Gigabit Passive Optical Networks (GPON) that enable data transmissions for fiber-to-the-home (FTTH) offerings. As a result of their internal gain, APDs can significantly enhance receiver sensitivity relative to a standard PI photodiode. This FI-APD uses JDSU proprietary APD designs known for their superior reliability. The dark current at 95% of breakdown voltage is typically in the subnano-amp range. It has an optical window of 53 m, and a remote metal bond pad of 60 m. The FI-APD has an operating temperature range from -40 C to 85 C, and the sensitivity with a low noise TIA can reach -33 dBm. All APD chips come from wafers that have JDSU qualifed. Qualification includes burn-in and functional testing of a sample quantity of chips from each wafer.. Each die shipped is tested at 25 C.