The ISSI IS62LV25616LL is high-speed, 4,194,304 bit static RAM organized as 262,144 words by 16 bits. It is fabricated using I SSI 's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected) or when CE is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62LV25616LL is packaged in the JEDEC standard 44-pin TSOP (Type II) and 48-pin mini BGA (8mm x 10mm and 7.2mm x 8.7mm).