The ISSI IS62LV12816L and IS62LV12816LL are highspeed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62LV12816L and IS62LV12816LL are packaged in the JEDEC standard 44-pin TSOP (Type II) and 48-pin mini BGA.