The ISSI IS61LV6424 is a high-speed, static RAM organized as 65,536 words by 24 bits. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 9 ns with low power consumption. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE1, CE2, and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. |