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Partname: | IRLMS6802PBF |
Description: | HEXFET Power MOSFET |
Manufacturer: | International Rectifier |
Datasheet: | PDF (149K). Click here to download *) |
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6TM package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. |
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Click here to download IRLMS6802PBF Datasheet*) |
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