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Partname: | IRF7105QPBF_10 |
Description: | HEXFETPOWERMOSFET |
Manufacturer: | International Rectifier |
Datasheet: | PDF (316K). Click here to download *) |
These HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. |
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Click here to download IRF7105QPBF_10 Datasheet*) |
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