The IRF6718L2TRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF6718L2TRPbF has extremely low Si Rdson coupled with ultra low package resistance to minimize conduction losses. The IRF6718L2TRPbF has been optimized for parameters that are critical in reliable operation on Active O-Ring / Efuse / hot swap applications.