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| Partname: | IRF6691 |
| Description: | V(dss): 20V; 2.5 mOhm (4.5V); 47nC; HEXFET power MOSFET plus schottky diode |
| Manufacturer: | International Rectifier |
| Package: | -- |
| Oper. temp.: | -40 to 150 |
| Datasheet: | PDF (224K).
Click here to download *) |
The IRF6691 combines IRs industry leading DirectFET package technology with the latest monolithic die technology, which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. |
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Click here to download IRF6691 Datasheet*) |
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