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Partname: | IRF6655 |
Description: | V(dss): 100V; 8.7nC; directFET power MOSFET |
Manufacturer: | International Rectifier |
Package: | -- |
Oper. temp.: | -40 to 150 |
Datasheet: | PDF (254K). Click here to download *) |
The IRF6655 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. |
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Click here to download IRF6655 Datasheet*) |
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