|
|
|
|
| Partname: | IRF5852 |
| Description: | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.090 Ohm, ID = 2.7A @ VGS = 4.5V, RDS(on) = 0.120 Ohm, ID = 2.2A @ VGS = 2.5V |
| Manufacturer: | International Rectifier |
| Package: | TSOP |
| Pins: | 6 |
| Oper. temp.: | -55 to 150 |
| Datasheet: | PDF (239K).
Click here to download *) |
These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. |
|
Click here to download IRF5852 Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|
