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| Partname: | IRF5851 |
| Description: | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm (P-Ch). VDSS = 20V, RDS(on) = 0.090 Ohm (N-Ch) |
| Manufacturer: | International Rectifier |
| Package: | TSOP |
| Pins: | 6 |
| Oper. temp.: | -55 to 150 |
| Datasheet: | PDF (172K).
Click here to download *) |
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. |
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Click here to download IRF5851 Datasheet*) |
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