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| Partname: | IRF5810 |
| Description: | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V |
| Manufacturer: | International Rectifier |
| Package: | TSOP |
| Pins: | 6 |
| Oper. temp.: | -55 to 150 |
| Datasheet: | PDF (208K).
Click here to download *) |
These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. |
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Click here to download IRF5810 Datasheet*) |
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