|
|
|
|
| Partname: | IRF5805 |
| Description: | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.098 Ohm, ID = -3.8A @ VGS = -10V, RDS(on) = 0.165 Ohm, ID = -3.0A @ VGS = -4.5V |
| Manufacturer: | International Rectifier |
| Package: | TSOP |
| Pins: | 6 |
| Oper. temp.: | -55 to 150 |
| Datasheet: | PDF (126K).
Click here to download *) |
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. |
|
Click here to download IRF5805 Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|
