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| Partname: | IRF5803 |
| Description: | HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V |
| Manufacturer: | International Rectifier |
| Package: | TSOP |
| Pins: | 6 |
| Oper. temp.: | -55 to 150 |
| Datasheet: | PDF (109K).
Click here to download *) |
These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. |
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Click here to download IRF5803 Datasheet*) |
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