ChipDocs - Datasheet Source for Semiconductor and Electronic Circuit Components
More than
12 925 253 
queries processed
Partname:IRF5803
Description:HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V
Manufacturer:International Rectifier
Package:TSOP
Pins:6
Oper. temp.:-55 to 150
Datasheet:PDF (109K).
Click here to download *)

These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

Click here to download IRF5803 Datasheet
Click here to download IRF5803 Datasheet
*)
*)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership.
Free Electronics Engineering Subscription
Win Win Circuit - PCB,PCBA,Touch Screen,LED Lighting
Win Win Circuit LTD. PCB, PCBA, LCD Module
www.wwteq.com
COPYRIGHT 1997-2024 ChipDocs  ALL RIGHT RESERVED