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| Partname: | IRF1902 |
| Description: | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 85 mOhm, ID = 4.0A @ VGS=4.5V, RDS(on) = 170 mOhm, ID = 3,2A @ VGS=2.7V |
| Manufacturer: | International Rectifier |
| Package: | SO-8 |
| Pins: | 3 |
| Oper. temp.: | -55 to 150 |
| Datasheet: | PDF (107K).
Click here to download *) |
These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. |
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Click here to download IRF1902 Datasheet*) |
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