The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.