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| Partname: | HGTG34N100E2 |
| Description: | 34A, 1000V N-Channel IGBT |
| Manufacturer: | Intersil Corp. |
| Datasheet: | PDF (38.7K).
Click here to download *) |
The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. |
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Click here to download HGTG34N100E2 Datasheet*) |
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