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Partname: | HGTG30N120D2 |
Description: | 30A, 1200V N-Channel IGBT |
Manufacturer: | Intersil Corp. |
Datasheet: | PDF (40.5K). Click here to download *) |
The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. |
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![Click here to download HGTG30N120D2 Datasheet](../../../pndecoder/datasheets/INTRS/img/000353.gif) Click here to download HGTG30N120D2 Datasheet*) |
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