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Partname:HGTG20N100D2
Description:20A, 1000V N-Channel IGBT
Manufacturer:Intersil Corp.
Datasheet:PDF (36.8K).
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The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.

Click here to download HGTG20N100D2 Datasheet
Click here to download HGTG20N100D2 Datasheet
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