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Partname:HGTG15N120C3D
Description:35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Manufacturer:Intersil Corp.
Datasheet:PDF (101K).
Click here to download *)

The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

Click here to download HGTG15N120C3D Datasheet
Click here to download HGTG15N120C3D Datasheet
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