These switches feature low analog ON resistance (<35) and fast switch time (tON <150ns). Low charge injection simplifies sample and hold applications. The improvements in the DG401/403/405/883 series are made possible by using a high voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. The 44V maximum voltage range permits controlling 30V peak-to-peak signals. Power supplies may be single-ended from +5V to +34V, or split from 5V to 17V.