The Radiation Hardened ACS11MS is a Triple 3-Input AND Gate. When all three inputs to one of the gates are at a HIGH level, the corresponding Y output will be HIGH. A LOW level on any input will cause the output for that gate to be LOW. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS11MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types.