The 1.8 Volt IntelWireless Flash Memory with 3 Volt I/O combines state-of-the-art Intel Flash technology with low power SRAM to provide the most versatile and compact memory solution for high performance, low power, board constraint memory applications. The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O offers a multi-partition, dual-operation flash architecture that enables the device to read from one partition while programming or erasing in another partition. This Read-While-Write or Read-While-Erase capability makes it possible to achieve higher data throughput rates as compared to single partition devices and it allows two processors to interleave code execution because program and erase operations can now occur as background processes. The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O incorporates a new Enhanced Factory Programming (EFP) mode to improve 12 V factory programming performance. This new feature helps eliminate manufacturing bottlenecks associated with programming high density flash devices. Compare the EFP program time of 3.5 s per word to the standard factory program time of 8.0 s per word and save significant factory programming time for improved factory efficiency. Additionally, the 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O includes block lock-down, programmable WAIT signal polarity and is supported by an array of software tools. All these features make this product a perfect solution for any demanding memory application.