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| Partname: | PTFB211501E |
| Description: | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ??? 2170 MHz |
| Manufacturer: | Infineon Technologies AG |
| Datasheet: | PDF (362K).
Click here to download *) |
The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. |
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Click here to download PTFB211501E Datasheet*) |
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