|
|
Partname: | PTFA091201GL |
Description: | Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ??? 960 MHz |
Manufacturer: | Infineon Technologies AG |
Datasheet: | PDF (287K). Click here to download *) |
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. |
|
Click here to download PTFA091201GL Datasheet*) |
|
*)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|