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| Partname: | PTFA091201GL |
| Description: | Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ??? 960 MHz |
| Manufacturer: | Infineon Technologies AG |
| Datasheet: | PDF (287K).
Click here to download *) |
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. |
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Click here to download PTFA091201GL Datasheet*) |
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