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Partname: | PTF080101M |
Description: | High Power RF LDMOS Field Effect Transistor 10 W, 450 ??? 960 MHz |
Manufacturer: | Infineon Technologies AG |
Datasheet: | PDF (258K). Click here to download *) |
The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. |
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![Click here to download PTF080101M Datasheet](../../../pndecoder/datasheets/INFIN/img/002696.gif) Click here to download PTF080101M Datasheet*) |
![](http://www.chipdocs.com/common/img/1x10t.gif) |
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