|
|
|
|
| Partname: | PTF080101M |
| Description: | High Power RF LDMOS Field Effect Transistor 10 W, 450 ??? 960 MHz |
| Manufacturer: | Infineon Technologies AG |
| Datasheet: | PDF (258K). Click here to download *) |
The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. |
|
 Click here to download PTF080101M Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|