The HYB/E 25L128160AC Mobile-RAMs are a new generation of low power, four bank Synchronous DRAM's organized as 4 banks x 2Mbit x16 with additional features for mobile applications. These synchronous Mobile-RAMs achieve high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated using the Infineon advanced process technology. The device adds new features to the industry standards set for synchronous DRAM products. Parts of the memory array can be selected for Self-Refresh and the refresh period during SelfRefresh is programmable in 4 steps which drastically reduces the self refresh current, depending on the case temperature of the components in the system application. In addition a "Deep Power Down Mode" is available. Operating the four memory banks in an interleave fashion allows random access operation to occur at higher rate. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device. The device operates from a 2.5V power supply for the core and 1.8V for the bus interface. The Mobile-RAM is housed in a FBGA "chip-size" package. The Mobile-RAM is available in the commercial (00 to 700C) and Extended ( -25oC to +85oC) temperature range.