The IDT71V256SB is a 262,144-bit high-speed static RAM organized as 32K x 8. The improved VIH (1.8V) makes the inputs compatible with 2.5V logic levels. The IDT71V256SB is otherwise identical to the IDT71V256SA. The IDT71V256SB has outstanding low power characteristics while at the same time maintaining very high performance. Address access times of as fast as12 ns are ideal for tag SRAM in secondary cache designs. When power management logic puts the IDT71V256SB in standby mode, its very low power characteristics contribute to extended battery life. By taking CS HIGH, the SRAM will automatically go to a low power standby mode and will remain in standby as long as CS remains HIGH. Furthermore, under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to always be less than 6.6mW and typically will be much smaller.