The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell's radiation hardened technology, and is designed for use in systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V 10% power supply. The RAM is wire bond programmable for either TTL or CMOS compatible I/O. Power consumption is typically less than 25 mW/MHz in operation, and less than 5 mW in the low power disabled mode. The RAM read operation is fully asynchronous, with an associated typical access time of 15 ns at 5V. Honeywell's enhancedSOI RICMOSTMIV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOSTM IV process is an advanced 5-volt, SIMOX CMOS technology with a 150 gate oxide and a minimum feature size of 0.7 m (0.55 m effective gate length--Leff). Additional features include Honeywell's proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.