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Partname:HC6856NSFCC60
Description: 32K x 8 STATIC RAM
Manufacturer:
Datasheet:PDF (160K).
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The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell's radiation hardened technology, and is designed for use in systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V 10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 50 mW/MHz in operation, and less than 5 mW/MHz in the low power disabled mode. The RAM read operation is fully asynchronous, with an associated typical access time of 20 ns. Honeywell's enhanced RICMOSTM IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout, and process hardening techniques. The RICMOSTM IV process is a 5-volt, twin-well CMOS technology with a 170 gate oxide and a minimum drawn feature size of 0.8 m (0.65 m effective gate length--Leff). Additional features include a three layer interconnect metalization and a lightly doped drain (LDD) structure for improved short channel reliability. High resistivity cross-coupled polysilicon resistors have been incorporated for single event upset hardening.

Click here to download HC6856NSFCC60 Datasheet
Click here to download HC6856NSFCC60 Datasheet
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