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Partname: | HMC457QS16G |
Description: | InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
Manufacturer: | Hittite Microwave Corporation |
Datasheet: | PDF (355K). Click here to download *) |
The HMC457QS16G is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE makes the HMC457QS16G an ideal power amplifier for Cellular/3G base station & repeater applications. |
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Click here to download HMC457QS16G Datasheet*) |
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